schottky barrier diode rb050l-60 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)small power mold type. (pmds) 2)low i r 3)high reliability ? structure ? construction silicon epitaxial planar ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a io a i fsm a tj c tstg c (*2) on the glass epoxy substrate, half sine wave at 180 ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f 1 - - 0.52 v i f =2.0a v f 2 - - 0.56 v i f =3.0a reverse current i r - - 100 ? a v r =60v parameter forward voltage parameter limits reverse voltage (repetitive) 60 (*1) on the glass epoxy substrate, half sine wave at 180 tc=69c max storage temperature ? 40 to ? 150 forward current surge peak (60hz ? 1cyc) reverse voltage (dc) 60 70 junction temperature 150 average rectified forward current (*1) 3 average rectified forward current (*2) 2 rohm : pmds jedec : sod-106 3 4 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 ? manufacture date ? pmds 2.0 4.2 2.0 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max 1/3 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb050l-60 0 10 20 30 40 50 ave25.6ns ta=25 ? c i f =0.1a i r =0.1a irr=0.1i r n=20pcs 0 1 2 3 4 5 012345 0.1 1 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) mounted on epoxy board 1ms im=100ma i f =100ma 300us time 1 10 100 1000 1 10 100 t ifsm 0 50 100 150 200 250 300 110100 8.3ms ifsm 1cyc 8.3ms 0 10 20 30 40 50 60 70 80 90 100 ave25.93a ta=25 ? c v r =60v n=50pcs 1 10 100 1000 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 10000 0 102030405060 ta=125 ? c ta=25 ? c ta=-25 ? c ta=75 ? c 0.01 0.1 1 10 0 0.10.20.30.40.50.6 ta=-25 ? c ta=125 ? c ta=75 ? c ta=25 ? c forward voltage v f (v) v f -i f characteristics forward current:i f (a) reverse current:i r (ua) reverse voltage v r (v) v r -i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (ua) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm disresion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth ( /w) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics trr dispersion map reverse recovery time:trr(ns) f=1mhz 0.46 0.47 0.48 0.49 0.5 0.51 0.52 ave:0.4884v ta=25 ? c i f =3a n=50pcs 550 560 570 580 590 600 610 620 630 640 650 ave:597.5pf ta=25 ? c f=1mhz v r =0v n=20pcs 0 50 100 150 200 250 300 ave:207.4a 8.3ms ifsm 1cyc dc d=1/2 sin( 180) 2/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb050l-60 0 0.1 0.2 0.3 0.4 0.5 0.6 0 102030405060 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 255075100125150 reverse power dissipation:p r (w) reverse voltage:v r (v) v r -p r characteristics ambient temperature:ta( ? c) derating curve'(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ? c) derating curve'(io-tc) electrostatic discharge test esd(kv) esd dispersion map sin( 180) dc d=1/2 d=1/2 dc sin( 180) t tj=150 ? c d=t/t t v r io v r =30v 0 a 0v sin( 180) dc d=1/2 t tj=150 ? c d=t/t t v r io v r =30v 0 a 0v 0 5 10 15 20 25 30 c=200pf r=0 ? c=100pf r=1.5k ? no break at 30kv ave:13.02kv 3/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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